Power Semiconductors & Control ICs
A comprehensive portfolio of power semiconductor and integrated circuit technologies in industry standard and innovative packages. We design forward-thinking, application-specific solutions to provide assurance that your most demanding requirements will be met.
Bare Die
Industrial Fuse Blocks
Starting with bare dies allows Littelfuse engineers to design and deliver the optimal power semiconductors for your application. Work with us to specify the size, shape, and capabilities of an ac bridge rectifier, diode module, IGBT, integrated circuit, MOSFET, Schottky diode, or thyristor module. We specialize in providing components that use silicon carbide and direct copper bonding substrates.
Gate Drivers
Littelfuse offers advanced gate driver ICs designed to optimize the switching performance of IGBTs, MOSFETs, and SiC-MOSFETs in power electronics. Our gate driver solutions include IGBT drivers and optically isolated gate drivers engineered for fast turnoff and high-efficiency control. Ideal for use in inverters, rectifiers, and other solid-state applications, our gate drivers ensure precise, reliable operation across demanding conditions.
Gate Driver ICs
Gate driver integrated circuits (ICs) control the operation of metal-oxide–semiconducotr field effect transistors (MOSFETs) and insulated gate bipolar transistor (IGBTs). Sold state design and a patented process that allows users to program the ICs’ voltage threshold make Littelfuse gate driver ICs ideal replacements for electromechanical relays and discrete diodes. We produce several versions of gate driver ICs specifically for silicon carbide MOSFETs (SiC-MOSFETs) and high-power IGBTs used in applications where fast turnoff is desirable.
IGBT & MOSFET Driver ICs
Ultrafast IGBT and MOSFET gate driver ICs ensure solid state switches perform efficiently. Littelfuse makes several integrated circuits to control gates on insulated-gate bipolar transistor and metal-oxide–semiconductor field effect transistors. We offer low side, high side, and half bridge drivers, as well as drivers optimized for automotive applications and for use with three-phase switches. Consult our gate driver brochure to learn which IC you need.
Optically Isolated Gate Drivers
- Isolated photovoltaic outputs of 5.5 V, 12 V, or 14.4 V
- LED input current requirements for MOSFETs of 2.5 mA or 5 mA
- Minimum short circuit currents of 1 mA or 2.5 mA
- On and off switching speeds lower than 80 ms and 60 ms, respectively
- Housings have UL 94 flammability ratings of V-0
- Isolation voltage ratings of 3.75 kV
- Certified lead-free and RoHS compliant
- No low frequency switching limit
- No auxiliary power supply required
- Floating outputs facilitate use in parallel or in series
- Galvanic input-to-output isolation
- Compatible with reflow soldering processes
SiCMOSFET & IGBT Driver ICs
- Available with peak voltage operating ratings from –10 V to +25 V
- Peak operating current of 9 A
- Output-to-sink resistance ratings of 1.5 Ω or 2.0 Ω
- Operate in a temperature range of –40 ℃ to +125 ℃
- 16-pin power SOIC packages with exposed thermal pads
- Certified lead-free and RoHS compliant
- Accept TTL and CMOS inputs
- Split source and sink outputs allow users to tailor turn-on and turn-off timing
- Matched rise and fall times minimize switching losses
- Low propagation delays ensure continuous flow of current
- Desaturation detection triggers overvoltage protection
- Soft turn off prevents commutation failures
- Undervoltage lockout prevents stray pulses across circuits
- Thermal shutdown protects components from damage due to overtemperature events
- Open drain fault detection facilitates automatic corrections by microcontrollers
- Compatible with reflow soldering processes
IGBTs
Insulated-gate bipolar transistors (IGBTs) serve as current converters, solid state switches, and circuit protection devices in thousands of different applications. Littelfuse and its IXYS subsidiary meet the demand for these versatile power semiconductors by producing the largest portfolio of discrete IGBTs and IGBT modules. Whether your products require inverters, rectifiers, overvoltage protection, ESD protection, or current switching devices, we can deliver off-the-shelf or custom-built IGBTs that do the job.
BiMOSFET
- High blocking voltage up to 3600V
- Low VCE(sat)
- Low gate charge QG
- High pulsed collector current
- Monolithically integrated diode
- Positive temperature co-efficient
- High power densities
- Low conduction losses
- Low gate driver requirements
- Reverse conduction
- Ease of paralleling
Capsule Type
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
Ignition
- Available with typical blocking voltage ratings from 365 V to 410 V
- Available with maximum current ratings from 12 A to 20 A
- Low saturation voltages (e.g., 1.3 V, 2.07 V)
- RoHS compliant
- Lead-free packages available
- Available with optional gate resistors and gate–emitter resistor
- High pulsed current capabilities
- Low threshold voltage for interfacing with logic circuits and microprocessors
NPT
- Typical saturation voltages of 2.4–4.0 V
- Available with a wide range of typical current ratings, from 5.5 A to 150 A
- Square reverse bias safe operating area (RBSOA)
- Epoxy moldings have UL 94 flammability rating of V-0
- Voltage-controlled metal oxide-semiconductor gates
- Positive temperature coefficients make NPT IGBTs ideal for using in parallel
- Square RBSOA improves inductive load clamping, which allows NPT IGBTs to handle hard switching without support from snubber diodes
- Available in several packages—TO-268, TO-247, TO-263, and proprietary ISOPLUS i4-PakTM
- High power densities
PT
- Rated at 600 V dc or 1.2 kV dc
- Low voltage saturation points of 2.5 V dc to 3.4 V dc
- Handle currents between 42 A and 120 A
- Avalanche rated
- Square reverse bias safety operating area (RBSOA)
- High power density
- Incorporation of metal oxide semiconductor (MOS) gate simplifies turn-on
- Available in three configurations, two of which have a gate, an emitter, and a collector while the other has just a gate and an emitter
- Three configurations allow designers to choose their best option in terms of switching frequency, efficiency, and cost
- Available in JEDEC TO standard packages
- Suitable for surface mounting or mounting with a single screw
- Available with an optional antiparallel fast-recovery diode
SMPD Packages-IGBTs
When you need dc–dc converters or ac-to-dc inverters that fit perfectly on PCBs and are sturdy enough for pick-and-place board assembly, choose Littelfuse SMPD IGBTs and BiMOSFETs. Our surface mount power devices offer low weight, high power cycling capabilities, excellent thermal performance, and isolation ratings up to 4.5 kV. Compatible with reflow soldering processes, our SMPDs come in several shapes and with differing types of silicon to serve as many requirements as possible. Common uses of these solid state switches include electric motor drives, battery chargers, and induction heaters.
XPT
- Available with continuous voltage (VCES) ratings from 600 V to 4.5 kV
- Available with typical current ratings from 9 A to 94 A
- Saturation voltages generally below 4 V
- Low case-to-junction resistance (e.g., 92 mK/W, 4.4 K/W)
- Positive temperature coefficient for on-state voltage facilitates paralleling
- Low gate current requirements
- Available packaged with fast recovery diodes
- International standard packages
Integrated Circuits
Integrated circuits (ICs) control, coordinate, and protect power supply circuits, diodes, phototransistors, shunt resistors, IGBTs, MOSFETs, and other power semiconductors. Types of ICs produced by Littelfuse include gate drivers, digital bus drivers, optocouplers, error amplifiers, high-voltage analog switches, voltage monitors, and digitally programmable capacitors. We also make ICs specifically engineered for use in telecommunications systems. Design options range from wafer fabrication and isolation barriers to multichip packaging and incorporation of overcurrent, overvoltage, overtemperature, and ESD protection.
Digital Bus Driver ICs
- Operate at between 2.7 V and 5.5 V
- Available with data transmission speeds of 5 kbaud, 10 kbaud, and 500 kbaud
- Isolation voltage of 3.75 kV
- CSA and TTU certified
- UL Listed
- Surface mount and dual inline packages
- High impedance (Hi-Z) maintained during power down, reducing voltage surges
- Low drive current requirements
- Galvanic input-to-output isolation
Digitally Programmable Capacitors
- Operate at between 2.5 V and 5.5 V
- Low capacitance range, from 6.6 pF to 190 pF
- Operate at frequencies in the range of 0 (dc) MHz to 200 MHz
- Operate at temperatures from –40 ℃ to +105 ℃
- Permit more than 1000 capacitance settings
- Miniature DFN and TSOT packages available
- Nonvolatile memory
- Reprogrammable via two-wire leads
Error Amplifiers
- Operate at 1.3 V to 12.5 V over circuits’ designed temperatures
- 350 V breakdown voltages for Darlington transistors
- Typical accuracy of 1.299 V ± 1 %
- 4-pin SOIC packages
- Certified lead-free and RoHS compliant
- Very low-profile design
- Low power dissipation
- Low collector current requirements
- Highly resistant to moisture (MSL 1)
High-Voltage Analog Switch ICs
- Operate at 3.3 V or 5 V
- Available with switch blocking voltage ratings of ±320 V or ±600V
- Available with switch-on resistance ratings of 14.5 Ω, 29 Ω, and 50 Ω
- Available with switch-to-switch isolation ratings of 60 dB at 1 kHz and 110 dB at 5 kHZ
- Switches activated by transistor–transistor logic (TTL)
- Include thermal shutdowns to protect against fault currents
- Include input latches to store data
- Available with 20 pins or 28 pins
LED Driver ICs
- Operate at wide ranges of input voltage (e.g., 8 V dc to 550 V dc)
- Employ power factor correction technology
- Low-profile designs (e.g., 6×1.27 mm pin-to-pin)
- Certified lead-free and RoHS compliant
- Can be used as dimmers
- Provide supplemental overcurrent, overvoltage, and overtemperature protection
- 8-pin designs simplify IC design by dedicating each pin to a prescribed input or output
- Convert at least 90% of power input to signal
- Proven to hold brightness levels and images steady through low-level transient current and voltage surges
Optocouplers
- Input-to-out isolation of 3750 Vrms
- Available with typical current transfer ratios of 300 % to 8500 %
- Typical input-to-output capacitance of 3 pF
- CSA, EN/IEC, and TUV certified
- UL Recognized
- Available with 6 to 16 pins
- Configured as surface mount or thru hole devices
- Optical and on-chip galvanic isolation
- Solid state relay–optocoupler modules allow designers to simplify circuits and reduce component counts
- Ideal for telecommunications, industrial control, and instrumentation circuits where isolating circuitry is crucial
Telecom ICs
Tip-and-ring phone lines, VOIP, and PBX systems require efficient line monitoring and switching solutions. Littelfuse delivers. Our telecom ICs include N-channel depletion metal-oxide–semiconductor field effect transistors (MOSFETs), optically isolated multipurpose chips, and line card access switches. We also offer assemblies of solid state relays, optocouplers, bridge rectifiers, Darlington transistors, and Zenner diodes. Find solutions for digital communications applications in our Integrated Circuits Selection Guide.
Voltage-Monitoring ICs
- Operates at 3 V dc to 5 V dc
- Common mode rejection ratio > 55 dB
- High differential input impedance and very low common mode input impedance
- 8-pin small outline integrated circuit
- Fixed gain amplifier
- Certified lead-free and RoHS compliant
- Worldwide telephone network compatibility
- Supports nontelephony applications such as instrumentation and industrial controls
- Available with differential or single-ended linear output
- Transistor–transistor and complementary metal-oxide-semiconductor (CMOS) logic-level outputs
MOSFETs (Si/SiC)
Littelfuse offers a comprehensive range of silicon and silicon carbide MOSFETs engineered for high-efficiency current conversion, switching, and power factor correction (PFC). Our portfolio includes discrete power MOSFETs and MOSFET modules suited for rectifiers, inverters, and PFC circuits. With a wide selection of MOSFET packages and configurations, we provide both off-the-shelf and custom-designed solutions to meet the unique needs of industrial and commercial power systems.
Automotive Qualified
Electric vehicles from passenger EVs to battery-powered forklifts require efficient solid-state switches that withstand strong vibrations and harsh operating conditions. Littelfuse meets this demand by producing automotive-qualified MOSFETs. These AEC-Q–qualified and avalanche-rated devices can serve as rectifiers and dc–dc converters in automotive electrical systems. They can also be used in audio amplifiers, motor controllers, and telecom systems. Each MOSFET boasts low on-state resistance, low gate charge, and high dv/dt ruggedness.
Low-Power Depletion Mode
- Normally closed when no power applied
- 350 V drain-to-source voltage
- Low cutoff voltage (VGS(off))
- High input impedance
- Low input and output leakage
- Specifically designed for high-voltage applications
- Ability to perform well in cold environments make devices good choice for automotive ignition modules
- Small size delivers PCB space- and cost-savings
- FET structure prevents thermal runaway and thermally induced secondary breakdown
N-Channel Depletion Mode
- Rated at 1 kV dc
- Normally on operation
- Available with blocking voltages of 100 V dc to 1700 V dc
- Low resistance while on (i.e., 1.4 Ω, 10 Ω)
- Epoxy case with UL 94 flammability rating of V-0
- Require zero turn-on voltage at gate terminal
- High power densities
- Ensure low power loss in always-on circuits
- Easy to mount on PCBs
N-Channel HiPerFETs
- Available with wide ranges of drain-to-source voltage ratings (e.g., 200 V dc to 1 KV dc)
- Available with wide ranges of drain current ratings (e.g., 10 A to 100 A)
- Avalanche rated with low total gate charge (Qg) and low intrinsic gate resistance (Rg)
- Low inductance
- High power densities
- Rugged polysilicon gate cell structure
- Available with a variety of leads and terminals
- Easy to mount on PCBs with one screw or solder
N-Channel Linear
- Available with wide ranges of drain-to-source voltage ratings, from 75 V dc to 2.5 kV dc
- Available with wide ranges of drain current ratings (e.g., 2 A to 62 A)
- Guaranteed forward bias safe operating areas (FBSOAs) at 75 ℃
- Avalanche rated with low total gate charge (Qg) and low intrinsic gate resistance (Rg)
- Epoxy moldings with UL 94 flammability ratings of V-0
- Designed specifically for linear operation
- High power densities
- Available with a variety of leads and terminals
- Easy to mount on PCBs with one screw or solder
N-Channel Standard
- Available with drain-to-source voltage ratings of 600 VDSS to 4.5 kVDSS
- Available with an extremely wide range of on-state resistance ratings, from 9 mΩ to 625 Ω
- Gate charge requirements as low as 7.8 nC
- Resistive switching times generally below 50 ns
- High power densities
- Low gate charges allow smooth switching at high frequencies
- JEDEC TO packages
- Ideally suited for paralleling
N-Channel Super Junction
- Available with drain-to-source voltage ratings of 600 VDSS and 800 VDSS
- Ultra-low on-state resistance ratings (e.g., 7 mΩ, 45 mΩ, 125 mΩ
- Typical drain current (ID25) between 25 A and 47 A
- Gate charge requirements below 250 nC
- Avalanche rated
- High power densities
- Available with Schottky diodes, ultra-fast antiparallel diodes, or fast recovery diodes
- Direct copper bond substrate isolation reduces thermal resistance from junction to heat sink
- International standard packages
N-Channel Trench Gate
- Available with drain-to-source voltage ratings of 40 VDSS to 300 VDSS
- Extremely low on-state resistance ratings (e.g., 0.85 mΩ, 1.3 mΩ, 3.1 mΩ)
- Available with a wide range of typical drain currents (ID25) from 32 A and 660 A
- Operate at temperatures from –40 ℃ to 175 ℃
- Avalanche rated
- High power densities
- Low on-state resistance minimizes power losses
- Optimized for synchronous rectification in switched mode power conversion applications
- International standard packages
N-Channel Ultra Junction
- Available with with a wide range of drain-to-source voltage ratings of 135 VDSS to 1 kVDSS
- Ultra-low on-state resistance ratings (e.g., 2.5 mΩ to 21 mΩ)
- Available with an extremely wide range of typical drain current (ID25) ratings, from 2 A to 200 A
- Gate charge requirements as low as 7 nC
- High power densities
- Low gate charges ensure higher efficiency while handling lower current loads
- Soft recovery reduces electromagnetic interference
- Suitable for paralleling
- International standard packages with low inductance
P-Channel
- Available with drain-to-source voltage ratings of –50 VDSS to –600 VDSS
- Available with 0n-state resistance of 8 m Ω to 1.2 Ω
- Available with gate charge requirements of 39 nC to 740 nC
- Avalanche-rated
- High power densities
- Low on-state resistances with positive temperature coefficients make P-channel MOSFETs easy to parallel
- Low gate charges simplify driver requirements
- JEDEC TO standard packages
- Available in bolt-down and surface mount configurations
Silicon Carbide-Multichip Configurations
Using multichip SiC MOSFETs allows PCB and integrated circuit designers to reduce component counts while also increasing current density. Littelfuse subsidiary IXYS produces several versions of these discrete MOSFETs in four configurations—common cathode, parallel cathode, phase leg, and phase leg with Schottky diodes. Each of our multichip SiC MOSFETs achieves higher switching speeds and lower switching losses than equivalently rated silicon MOSFETs. Common applications for these solid state switches include dc–dc converters, industrial motor drives, solar inverters, battery chargers, and switch mode power supplies.
SMPD Packages-MOSFETs
Choose Littelfuse SMPD MOSFETs for applications requiring ultra-compact and lightweight dc–dc converters and inverters that save space on printed circuit boards. We provide these surface mount power devices in single-phase, three-phase, boost, buck, full bridge, and half bridge configurations. Each delivers multiple benefits, including an ability to share heat sinks with other devices and a capability to withstand high vibrations. These features make SMPD MOSFETs good solid state switches for battery chargers and motor controllers in appliances and portable electronics.
Switchable Current Regulators
- Rated at 450 V ac or 900 V ac
- Continuous power dissipation of 40 W
- High dynamic resistance ratings of 58 kΩ or 9–900 kΩ
- Meet JEDEC TO-220 and TO-252 standards for pin spacing
- Operate in analog and mixed-signal systems
- Replace multiple resistors and diodes
- Allow PCB designers to reduce the number of discrete devices and simplify circuits
- Available with option to let users program resistor current source
Power Diodes
Diodes for power supply applications require low reverse recovery times and low forward voltage drops. Each discrete diode produced by Littelfuse boasts these characteristics, as well as low leakage. Our rectifier, ultrafast rectifier, fast recovery, and silicon Schottky diodes offer optimal switching solutions for dc–dc converters, induction heaters, and ultrasonic cleaners and welders. The Schottky devices are especially suited for use in EVs. Consult our Power Semiconductor Product Catalog to find the diode you require.
Avalanche
- Available with maximum repetitive reverse voltage (VRRM) ratings of 800 V to 1.6 kV
- Available with average forward current IFAVG ratings of 2.3 A to 110 A
- Planar glass passivated chips
- RoHS compliant
- Available in single, phase leg, common cathode, and dual diode configurations
- International standard packages
- Low current leakage
Breakover Diodes
- Available with a wide range of breakover ratings, from 400 VBO to 4.2 kVBO
- Available with voltage tolerances of ±50 V or ±100 V
- Handle pulse currents up to 200 A
- Low forward current (Ifavm), from 0.2 A to 1.25 A
- Very low temperature dependence (e.g., 0.7 • 10–3 K, 2 • 10–3 K)
- Epoxy moldings with UL 94 flammability rating of V-0
- RoHS compliant
- Fast or very fast turn-on
- Available in oilproof packages
- Low weight
- Designed with pins to facilitate soldering on printed circuit boards
Fast Recovery
- Available with typical reverse recovery times as low as 0.3 µs
- Available with maximum repetitive recovery voltage (Vrrm) from 200 V to 6 kV
- Available with low maximum forward voltage drop ratings of 900 mV to 4.33 V
- Available with a broad range of average forward current (Ifav) current ratings of 5 A to 2.423 kA
- Available in single, dual, and common cathode configurations
- Low current leakage
- Low terminal-to-junction thermal resistance
- International standard packages for all but select HiPerDYN diodes designed for superior voltage isolation
Rectifier
- Available with a wide range of voltage ratings, from 200 Vrpm to 7.2 Vrpm
- Available with a wide range of current ratings, from 15 A to 12.1 kA
- Operate in a temperature range of –40 ℃ to 150 ℃
- RoHS compliant
- Available in international standard packages
- Available in surface mount, capsule, and stud configurations
- Optimized to produce low conduction losses
- High surge current capabilities
Schottky (Si/SiC)
- Available with wide ranges of current ratings (e.g., 5 A and 200 V ac, 30 A and 100 V ac)
- Low to ultra-low forward voltage drop (e.g., 0.80 V ac at 10 A, 0.68 V ac at 20 A)
- Operate at up to 150 ℃
- Meet ITO-220AB standards for pin spacing
- Low current leakage
- Common cathode configuration
- Single-screw mounting design
- Guard rings enhance ruggedness and long-term reliability
Semifast
- Rated at 1400 Vrms, 1600 Vrms, and 1800 Vrms
- Typical reverse recovery time (trr) of 40 ns
- Average forward current (Ifavm) of 63 A
- Planar passivated junctions
- Epoxy moldings with a UL 94 flammability ratings of V-0
- JEDEC TO-247AD package sizes
- Soft recovery
- Extremely low switching losses
- Low voltage peaks reduce need for surge protection devices in circuit
- Operate at lower temperatures, which saves board space and simplifies circuit design by reducing need for cooling
Power Modules
Diode modules and thyristor modules for power control applications perform best when they possess low thermal impedance and high overload capacity. Each of the modules produced by Littelfuse meet those requirements while also exhibiting low current leakage and low forward voltage drop. Designed for easy bolt-down mounting, our diode and thyristor modules offer full pressure contact to ensure high efficiency. Manufactures typically install the modules as rectifiers, ac–dc converters, and ac switches in induction heaters, electric motors, and lighting controls.
AC Bridge Rectifiers
Ac bridge rectifiers convert alternating current from mains to direct current for electric motors and other types of equipment. Littelfuse subsidiary IXYS makes several single-phase and three-phase ac bridge rectifiers that coordinate the operations of diodes, thyristors, and MOSFETs across integrated circuits. The solid state ac–dc switches boast small footprints, and different configurations can perform half- or full-bridging. Consult our Integrated Circuits Selection Guide to identify solutions for your application.
High-Voltage Rectifiers
- Available with maximum repetitive reverse voltage (Vrrm) ratings of 3.2 kV to 24 kV
- Available with average forward current Ifavg ratings of 1 A to 23 A
- Available with total circuit resistance (rt) ratings from 16 mΩ to 1.8 Ω
- Avalanche rated
- Hermetically sealed epoxy housings prevent contamination from dust and corrosion from moisture
- Sealed housings allow use in oil for cooling with or without a plate
- Can be used in series and in parallel
- High voltage capabilities reduce need for protective devices and protection circuits
- Mount with single bolt
- International standard packages
Single-Phase Bridges – AC Bridge Rectifiers
- Maximum repetitive reverse blocking voltage (Vrrm) ratings from 800 V to 1.8 kV
- Bridge output currents (Idav) at 100 ℃ from 14 A to 124 A
- Maximum forward surge current (I) from at 45 ℃ from 120 A to 1.8 kA
- Isolation voltages up to 3 kV
- Planar passivated chips
- Epoxy housings with UL 94 flammability ratings of V-0
- RoHS compliant
- International standard packages
- Soldering pins for PCB mounting
- Small size delivers space and weight savings
Three-Phase Bridges – AC Bridge Rectifiers
- Drain source (Vdss) and continuous collector-to-emitter voltage (Vces) ratings depend on architecture and diode bridge pairings
- Available with typical current ratings from 35 A to 130 A
- Available with net power (Pn) ratings of 10kW, 15 kW, or 30 kW
- Isolation voltage ratings of 3.6 kVrms
- Kelvin source terminals mean devices require low drive currents
- Low package inductance enables high-speed switching
- Direct copper bond ceramic base plates optimize heat transfer characteristics
- Solderable pins facilitate mounting on printed circuit boards
- Compatible with wave soldering
- Can also mount with two screws
- International standard packages
Solid State Relays
OptoMOS® solid-state relays enable fast, reliable, and bounce-free current switching electrical systems using alternating current and carrying high loads. Littelfuse offers these semiconductor-based relays in compact designs suitable for mounting on printed circuit boards and requiring minimal heat sinking. Our solid-state relays make ideal replacements for reed relays and electromechanical relays.
OptoMOS Relays
OptoMOS® relays come in three configurations. The solid state relays have normally open (Form-A), normally closed (Form-B), or switchover (Form-C) switches. Each relay is an integrated circuit consisting of semiconductors, and most can mount on printed circuit boards. The devices make good alternatives to reed relays and other types of electromechanical relays because they require less power to operate. Consult the Littelfuse Integrated Circuits Selection Guide to identify the best relay for your application.
Combination NO+NC
- Available with blocking voltages of 60 V, 250 V, and 350 V
- Available with typical load currents from 120 mA to 1 A
- Available with on-state resistance ratings of 400 mΩ to 35 Ω
- Available with isolation voltages up to 3.75 kV
- Plastic housings have UL flammability ratings of V-0
- CSA and TUV certified
- UL recognized
- Low current leakage
- Generate no electromagnetic or radio frequency interference
- Low drive current requirements
- Galvanic input-to-output isolation
- Available with current-limiting circuitry
- Surface mount configurations available
Normally Closed Relays
- Available with blocking voltage ratings from 30 V to 800 V
- Available with load current ratings from 75 mA to 3.25 A
- Available with a broad range of on-state resistance ratings, from 300 mΩ to 50 Ω
- Isolation voltage ratings up to 5 kV
- Housings have UL 94 flammability ratings of V-0
- Output capacitance lower than 1 nF
- Certified lead-free and RoHS compliant
- Available with unidirectional or bidirectional polarity
- Configured with 4, 6, or 8 pins
- Generate no electromagnetic or radio frequency interference
- Low drive current requirements
- Optically isolated outputs and galvanic isolation from input to output
Normally Open Relays
- Available with blocking voltage ratings from 30 V to 1 kV
- Available with load current ratings from 50 mA to 1 A
- Available with a very broad range of on-state resistance ratings, from 40 mΩ to 35 Ω
- Isolation voltage ratings up to 3.75 kV
- Housings have UL 94 flammability ratings of V-0
- Output capacitance ratings lower than 50 pF
- Certified lead-free and RoHS compliant
- Available with unidirectional or bidirectional polarity
- Configured with 4, 6, or 8 pins
- Generate no electromagnetic or radio frequency interference
- Low drive current requirements
- Optically isolated inputs and galvanic isolation from input to output
OptoMOS Power Relays
- Blocking voltage (Vp) ratings from 60 V to 1 kV
- Available with a wide range of load current ratings in free air, from 650 mA to 9 A
- Available with a higher range of load current ratings when used with heat sinks, from 1.6 A to 22.8 A
- Available with very low and low on-state resistance ratings, from 50 mΩ to 3 Ω
- 2.5 kVrms isolation voltage
- UL-recognized
- Devices with unidirectional and bidirectional outputs available
- Low drive current requirements
- Use of direct copper bond ceramic substrates delivers low thermal impedance
- Generate no electromagnetic or radiofrequency interference
- Galvanic input-to-output isolation
- International standard 4-pin and 8-pin designs
Stacks, Subsystems & Assemblies
Power semiconductor stacks and subsystems combine and coordinate solid state switches, diodes, thyristors, IGBTs, and transient voltage surge suppressors in compact, easy-to-install assemblies. The stacks most often serve as rectifiers and inverters. Each off-the-shelf stack made by Littelfuse includes a low-noise cooling fan and high-speed fuses to protect against short circuits. We also supply accessories for power semiconductor stacks and subsystems, including clips, clamps, mounting grease, and heat sinks. Contact us to discuss custom designing a stack if you do not find a prebuilt solution that meets your needs.
Clamps
- Available with capsule holding forces from 450 kgf to 8500 kgf
- Available with mounting surface diameters from 19 mm to 132 mm
- Available with rod sizes from M6 to M16
- Ideal for capsules with diameters of 126 mm
- Precalibrated indicators eliminate the need for special tools or torque wrenches
- Two-rod system ensures even clamping force
- Junctions withstand temperatures up to 190 °C
Coolers
- Available with cooler thicknesses of 16 mm to 34 mm
- Available with bus bar thicknesses of 6.4 mm to 10 mm
- Net weight per cooler ranges from 400 g to 5.95 kg
- Quarter-inch BSPP (British Standard Parallel Pipe) hydraulic fittings
- Made from aluminum or copper
- Very flat (20 µm) and very smooth (0.8 µm) contact areas
- Designed for use in tandem and performance-tested with two or three coolers cooling a single semiconductor assembly
- International standard packages
Heat Sinks
- Available with areas from 2.979 m3 to 11.172 m3
- Available with peripheral measurements of 1.059 m to 6.620 m
- Available with weights from 8.1 kg to 30 kg
- Flat, smooth surfaces ensure secure clamping and protect power stack housings
- International standard packages
Power Semiconductor Accessories
Ensuring power semiconductor stacks perform optimally requires installing and maintaining the assemblies with high-quality components. For this reason, Littelfuse offers several types of capsule insulators, silicon sleeve cables, and coaxial cables. Each cable comes with color-coded red and white terminals. We can also deliver mounting grease for press-pack IGBTs and PTFE tubing for supplying water to external coolers.
Power Stacks
- Link voltage of 2.8 kV dc
- Current rating of 1.2 kArms
- UL Recognized
- RoHS compliant
- Integrated snubber circuit
- Advanced optically fired gate trigger units
- Complete pressure contact construction
- Short inductance paths reduce inductance peaks
- Short paths between components reduce inductance peaks
- Preloaded clamping evenly distributes applied forces
Thyristors (SCR & TRIAC)
Littelfuse offers a wide range of discrete thyristors designed for reliable switching and overvoltage protection in demanding electronic systems. Our portfolio includes power SCR (silicon-controlled rectifier) thyristors for unidirectional control, TRIACs for bidirectional switching, and integrated QUADRACs combining TRIACs and DIACs for enhanced alternating current performance. We also supply standalone DIACs for precise thyristor gate triggering. Common TRIAC applications and power SCR uses include motor speed regulation, lighting control, and heating systems.
AC Switches
- Typical current (ITrms rating of 90 A
- Voltage (VDRM) rating of 60 V
- Surge capability up to 950 A
- Handles frequencies in the range of 50 Hz to 60 Hz
- UL Recognized
- RoHS compliant
- Very low turn-on and turnoff times
- Low gate current requirements
- Glass passivated junctions ensure low junction-to-case thermal resistance
- SOT-227B package with minimum isolation voltage of 2.5 kV
Fast Thyristors
- Maximum turnoff times below 35 µs
- Available with dynamic resistance voltage (VDRM) ratings from 294 V to 2.5 kV
- Available with maximum repetitive reverse voltage (VRRM) ratings from 10 V to 2 kV
- Available with average on-state current (ITAV at 55 ℃) ratings of 128 A to 1.11 kA
- Low resistance ratings (e.g., 212 m Ω, 2.1 Ω)
- Available in capsule and stud configurations
- Low gate current requirements
- Operate in wide range of ambient temperatures, from –40 ℃ to +125 ℃
- International standard packages
Gate Turn Off
- Available with dynamic resistance voltage (VDRM) ratings from 1.2 kV to 4.5 kV
- Available with maximum repetitive reverse voltage (VRRM) ratings from 400 V to 2 kV
- Available with peak turnoff current (ITGQ) ratings from 400 A to 4 kA
- On-state voltage drops below 4.4 V
- Maximum turnoff times below 30 µs
- Capsule and stud configurations available
- Low gate trigger current requirements
- High current surge capabilities
- International standard packages
Medium Voltage
- Rated at between 3.2 kA and 6.5 kA
- Available with silicon capsule diameters from 35 mm to 96 mm
- Optimized for series operation in electrical systems with voltage ratings up to 6.5 kV and current ratings less than 4 kA
- Maximum power handling capacity achieved at line frequencies below 400 Hz
- Patented distributed gate architecture ensures excellent switching performance over wide ranges of voltages and currents
- Engineered to achieve optimal balance between conduction losses, turnoff time, and power-handling capacity
- Can be used in parallel
- Predictable fast turnoff prevents commutation failure
Phase Control
- Operate at voltages from 400 Vrms to 6.5 kVrms
- Available with nonrepetitive surge current (ITSM) ratings up to 8 kA
- Typical gate turn-on time of 1 µs to 3 µs
- Low resistance ratings of 0.171 mΩ to 1.79 mΩ
- Operate at temperatures from –40 ℃ to +125 ℃
- Low conduction losses
- Optimized for applications with line frequencies up to 400 Hz
- Maximum current ratings for thyristors this size
- Lowest thermal resistance of thyristors this size
QUADRAC
- Available with 400 Vdrm/Vrrm and 600drm/Vrrm
- Minimum of 2.5 kVrms ac isolation between mounting tab and active terminals
- Typical forward current ratings (It(rms)) of 8 A, 12 A, and 4–15 A
- Surge capabilities of 200 A to 600 A
- UL Recognized
- RoHS compliant
- Available in alternistor versions that eliminate the need for snubber diodes
- Available in TO-220 and TO-220AB packages
- Provide full control of light output at extreme low end of current loads
- Reduced need for heat sinking
- Reliable dimming enhances useful lifespans of LEDs
SCR
- Blocking voltage ratings of 200 V dc to 600 V dc
- Available with surge capabilities of 15 A, 25 A, and 30 A
- Available with ampere ratings of 1 A, 1.5 A, and 2 A
- Turnoff times below 55 µs
- RoHS compliant
- Available in surface mount and axial pass thru configurations
- Glass passivated junctions ensure durability
- Sensitive gates allow for direct interfacing with microprocessors
- Compatible with lead-free reflow soldering processes
SIDAC
- Triggering voltages of 190 V ac to 380 V ac
- Low on-state voltages of 1 V ac to 15 V ac
- Typical on-state current of 1 A
- Glass passivated junctions
- RoHS compliant
- Available in surface mount and axial leaded configurations
- Available with unidirectional or bidirectional performance
- Produce multiple pulses in each half cycle at 50–60 Hz
- Blocking capability ensured by glass passivated junctions
- Also used in high-voltage power supplies and natural gas igniters
TRIAC
- High voltage capabilities, from 500 V ac to 1.2 kVa
- Surge capabilities up to 200 A
- Epoxy molding has UL 94 flammability rating of V-0
- UL Recognized
- RoHS compliant
- Passivate junctions reduce current leakage
- Designed to mount on PCBs with screws or solder
- Available with several types of terminals
- Solid state switching eliminates arcing that creates voltage
- Require small gate activation pulses each half cycle





























































